Investigation of the quantum efficiency of an edge emitting InGaAs laser
Abstract
The I-V (current vs. voltage) and L-I (light output vs. current) characteristics of an InGaAs edge emitting laser were determined. The cavity length dependence of the external quantum efficiency was derived and the internal quantum efficiency was determined to be 79%. This serves as a benchmark for the characterization of future locally fabricated lasers in the laboratory.
Downloads
Issue
Creating essential bridges uniting physics, society and industry
22-25 October 2003, University of San Carlos, Cebu City