Investigation of the quantum efficiency of an edge emitting InGaAs laser

Authors

Gabriel Manasan National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The I-V (current vs. voltage) and L-I (light output vs. current) characteristics of an InGaAs edge emitting laser were determined. The cavity length dependence of the external quantum efficiency was derived and the internal quantum efficiency was determined to be 79%. This serves as a benchmark for the characterization of future locally fabricated lasers in the laboratory.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-3C-03

Section

Optics and Photonics

Published

2003-10-22

How to Cite

[1]

G Manasan, E Estacio, and A Salvador, Investigation of the quantum efficiency of an edge emitting InGaAs laser, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-3C-03 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-3C-03.