Investigation of the optoelectronic properties of an MBE-grown InGaAs/GaAs quantum well light emitting diode

Authors

  • Gabriel Manasan ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Room temperature electroluminescence and photocurrent spectroscopy were performed on an MBE grown InGaAs/GaAs quantum well p-I-n heterostructure. Absorption and emission peaks are found at a wavelength near 9850 Å. Calculations show that this is an experimental verification of the intended nominal well width of 60 Å. From the electroluminescence experiment, the quantum efficiency of the device is measured to be 0.96%.

SPP 2002 Proceedings Cover

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Published

2002-10-23

Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter and Plasma Physics

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How to Cite

[1]
“Investigation of the optoelectronic properties of an MBE-grown InGaAs/GaAs quantum well light emitting diode”, Proc. SPP, vol. 20, no. 1, p. SPP-2002-PP-15, Oct. 2002, Accessed: Apr. 23, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2002-PP-15