Implant profiling using scanning spreading resistance microscopy

Authors

Alvarado Tarun ⋅ PH Intel Technology Philippines, Inc.
Marilin Nery ⋅ PH Intel Technology Philippines, Inc.
Michelle Bailon ⋅ PH Intel Technology Philippines, Inc.
Paul Concepcion ⋅ PH Intel Technology Philippines, Inc.
Alexander Mendenilla ⋅ PH Intel Technology Philippines, Inc.
Noel De Luna ⋅ PH Intel Technology Philippines, Inc.

Abstract

Two-dimensional implant profiling using Scanning Spreading Resistance Microscopy (SSRM) on the electrostatic discharge (ESD) protection diode of complementary metal oxide semiconductor (CMOS) devices at different device bias voltage and applied pressure or deflection setpoint into the tip to maintain electrical contact is presented. The measured resistance does not significantly vary with bias voltage but is observed to exponentially decrease with increasing deflection setpoint. The possible application of this tool for failure analysis is also presented.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-2C-02

Section

Instrumentation and Optics

Published

2002-10-23

How to Cite

[1]

A Tarun, M Nery, M Bailon, P Concepcion, A Mendenilla, and N De Luna, Implant profiling using scanning spreading resistance microscopy, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-2C-02 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-2C-02.