Effect of Ar addition in N2 discharge by ion bombardment of liquid Ga surface using plasma-sputter source

Authors

  • Randolph Flauta Department of Electronics, Doshisha University, Japan
  • Toshiro Kasuya Department of Electronics, Doshisha University, Japan
  • Tadashi Ohachi Department of Electronics, Doshisha University, Japan
  • Motoi Wada Department of Electronics, Doshisha University, Japan

Abstract

The effect of plasma ion bombardment on liquid Ga had been investigated using a multi-cusp plasma sputter ion source. The use of pure N2 plasma enhanced the reaction of N2 with liquid Ga to produce bulk and thin film GaN. Optical emission spectra of the plasma near the Ga surface show the most intense peak in the second positive region of excited N2 molecules at 391 nm wavelength. As the nitrogen line spectra dominate, the Ga peaks cannot be distinguished in a pure N2 plasma. Using Ar, the sputtering of Ga has been confirmed and with the mixture of N2, the peaks of N2, Ar and Ga are observed. Produced bulk and thin film GaN are characterized using X-ray diffraction. The bulk crystals exhibit good crystalline and texture quality with peaks at angles corresponding to (002) and (004) GaN reflections. The produced GaN films also show preferred orientation at (002) reflection of GaN.

Downloads

Issue

Article ID

SPP-2002-1C-05

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]
R Flauta, T Kasuya, T Ohachi, and M Wada, Effect of Ar addition in N2 discharge by ion bombardment of liquid Ga surface using plasma-sputter source, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-1C-05 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-1C-05.