Comparative study on x-ray diffraction of GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates

Authors

Luisito C. Guiao National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Raymund Lee Sarmiento National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Comparison was done on the structural properties of GaAs/Al0.3Ga0.7As multiple quantum wells (MQW) grown via molecular beam epitaxy (MBE). MQW samples were grown by pair on on-axis (001 orientation) and off-axis (tilted by 4° toward (111) orientation) n⁺ GaAs substrates at varying well width of 50Å, 90Å, and 120Å and at constant barrier width of 100Å. X-ray diffraction (XRD) rocking curves at (002) reflection revealed that there are no appreciable differences in the well width, layer interfaces, intensities and the full width at half maximum (FWHM) of satellite peaks of all MQW heterostructures grown on on-axis and off-axis substrates. However, the intensity of the photoluminescence spectrum of off-axis grown MQWs was considerably stronger for smaller well width. A trend was seen where the ratio of the PL signals between off-axis and on-axis grown MQWs decreased as the well width was increased from 50Å to 120Å. Light hole and heavy hole transitions resolved in smaller well width MQWs indicated growth uniformity of well layers.

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Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Article ID

SPP-2001-H2C-4

Section

Semiconductor Physics

Published

2001-10-24

How to Cite

[1]

LC Guiao, AS Somintac, RL Sarmiento, ES Estacio, and AA Salvador, Comparative study on x-ray diffraction of GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates, Proceedings of the Samahang Pisika ng Pilipinas 19, SPP-2001-H2C-4 (2001). URL: https://proceedings.spp-online.org/article/view/SPP-2001-H2C-4.