Pulsed laser deposition of titanium on silicon in a N2 environment

Authors

  • Jose Omar S. Amistoso National Institute of Physics, University of the Philippines Diliman
  • Edgardo L. Pabit National Institute of Physics, University of the Philippines Diliman
  • Marilyn Sheryl A. Hui National Institute of Physics, University of the Philippines Diliman
  • Wilson O. Garcia National Institute of Physics, University of the Philippines Diliman

Abstract

In this communication, we report the fabrication of titanium nitride thin film on silicon substrate through pulsed laser deposition (PLD). A pulsed Nd-YAG laser is used to ablate a Ti target in a nitrogen environment to deposit a TiN film on silicon. The effects of the different deposition parameters on the film quality are studied.

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Published

1999-10-22

How to Cite

[1]
JOS Amistoso, EL Pabit, MSA Hui, and WO Garcia, Pulsed laser deposition of titanium on silicon in a N2 environment, Proceedings of the Samahang Pisika ng Pilipinas 17, SPP-1999-MS-01 (1999). URL: https://proceedings.spp-online.org/article/view/SPP-1999-MS-01.