Pulsed laser deposition of titanium on silicon in a N2 environment
Abstract
In this communication, we report the fabrication of titanium nitride thin film on silicon substrate through pulsed laser deposition (PLD). A pulsed Nd-YAG laser is used to ablate a Ti target in a nitrogen environment to deposit a TiN film on silicon. The effects of the different deposition parameters on the film quality are studied.
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Article ID
SPP-1999-MS-01
Section
Materials Science
Published
1999-10-22
How to Cite
[1]
JOS Amistoso, EL Pabit, MSA Hui, and WO Garcia, Pulsed laser deposition of titanium on silicon in a N2 environment, Proceedings of the Samahang Pisika ng Pilipinas 17, SPP-1999-MS-01 (1999). URL: https://proceedings.spp-online.org/article/view/SPP-1999-MS-01.