Pulsed laser deposition of titanium on silicon in a N2 environment

Authors

  • Jose Omar S. Amistoso ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Edgardo L. Pabit ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Marilyn Sheryl A. Hui ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Wilson O. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this communication, we report the fabrication of titanium nitride thin film on silicon substrate through pulsed laser deposition (PLD). A pulsed Nd-YAG laser is used to ablate a Ti target in a nitrogen environment to deposit a TiN film on silicon. The effects of the different deposition parameters on the film quality are studied.

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Published

1999-10-22

How to Cite

[1]
“Pulsed laser deposition of titanium on silicon in a N2 environment”, Proc. SPP, vol. 17, no. 1, p. SPP-1999-MS-01, Oct. 1999, Accessed: Apr. 13, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-1999-MS-01