Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructure from temperature-dependent terahertz time domain emission spectroscopy and photoreflectance spectroscopy
Abstract
Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructure was investigated using terahertz time domain emission spectroscopy and photoreflectance spectroscopy. Results are discussed in the framework of the temperature dependence of junction electric field. The information may allow us to conveniently investigate the electric field via THz time domain spectroscopy.
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Opportunities and challenges in physics collaboration and research
7-10 June 2017, Cebu City
Mabuhay! This is our first issue published using PKP's Online Journal Systems (OJS). Full online access to PDF articles is provided to registered Paperview users.