Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructure from temperature-dependent terahertz time domain emission spectroscopy and photoreflectance spectroscopy

Authors

Hannah R. Bardolaza ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Miguel Bacaoco ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman

Keywords:

Terahertz, Modulation-doped heterostructure, Gallium arsenide

Abstract

Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructure was investigated using terahertz time domain emission spectroscopy and photoreflectance spectroscopy. Results are discussed in the framework of the temperature dependence of junction electric field. The information may allow us to conveniently investigate the electric field via THz time domain spectroscopy.

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Published

2017-06-07

Issue

2017: Proceedings of the 35th Samahang Pisika ng Pilipinas Physics Conference

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

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How to Cite

[1]

“Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructure from temperature-dependent terahertz time domain emission spectroscopy and photoreflectance spectroscopy”, Proc. SPP, vol. 35, no. 1, p. SPP-2017-PA-25, Jun. 2017, Accessed: Apr. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/229