Efficiency enhancement of p-n heterojunction GaAs solar cells via wet chemical etching and pattern design of metal contact

Authors

Philippe Tingzon ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rhenish Simon ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joseph Christopher Ragasa ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karim Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs p-n junction layers were grown via Molecular Beam Epitaxy, fabricated into solar cell fabricated into a solar cell by depositing gold contact pads via UV lithography and electron beam deposition and characterized by taking its I-V curve. By varying solar cell thickness, which in turn affects the dopant and diffusion length via chemical etching, allowed the enhancement of the solar cell’s minimum efficiency when fabricated.

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Published

2014-10-17

Issue

2014: Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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How to Cite

[1]

P Tingzon, R Simon, JC Ragasa, JD Vasquez, K Omambac, A Somintac, and A Salvador, Efficiency enhancement of p-n heterojunction GaAs solar cells via wet chemical etching and pattern design of metal contact, in Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress (Philippines, 2014), SPP2014-PA-09. URL: https://proceedings.spp-online.org/article/view/1856

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