Efficiency enhancement of p-n heterojunction GaAs solar cells via wet chemical etching and pattern design of metal contact

Authors

Philippe Tingzon National Institute of Physics, University of the Philippines Diliman
Rhenish Simon National Institute of Physics, University of the Philippines Diliman
Joseph Christopher Ragasa National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
Karim Omambac National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs p-n junction layers were grown via Molecular Beam Epitaxy, fabricated into solar cell fabricated into a solar cell by depositing gold contact pads via UV lithography and electron beam deposition and characterized by taking its I-V curve. By varying solar cell thickness, which in turn affects the dopant and diffusion length via chemical etching, allowed the enhancement of the solar cell’s minimum efficiency when fabricated.

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Issue

2014: Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2014-PA-09

Section

Poster Session PA

Published

2014-10-17

How to Cite

[1]

P Tingzon, R Simon, JC Ragasa, JD Vasquez, K Omambac, A Somintac, and A Salvador, Efficiency enhancement of p-n heterojunction GaAs solar cells via wet chemical etching and pattern design of metal contact, Proceedings of the Samahang Pisika ng Pilipinas 32, SPP2014-PA-09 (2014). URL: https://proceedings.spp-online.org/article/view/1856.