Efficiency enhancement of p-n heterojunction GaAs solar cells via wet chemical etching and pattern design of metal contact

Authors

  • Philippe Tingzon ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Rhenish Simon ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Joseph Christopher Ragasa ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Karim Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs p-n junction layers were grown via Molecular Beam Epitaxy, fabricated into solar cell fabricated into a solar cell by depositing gold contact pads via UV lithography and electron beam deposition and characterized by taking its I-V curve. By varying solar cell thickness, which in turn affects the dopant and diffusion length via chemical etching, allowed the enhancement of the solar cell’s minimum efficiency when fabricated.

Proceedings SPP 2014 Cover

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Published

2014-10-17

Issue

2014: Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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How to Cite

[1]
“Efficiency enhancement of p-n heterojunction GaAs solar cells via wet chemical etching and pattern design of metal contact”, Proc. SPP, vol. 32, no. 1, p. SPP2014-PA-09, Oct. 2014, Accessed: Apr. 18, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/1856