Effects of post-annealing temperature on graphite film fabrication using femtosecond pulsed laser deposition

Abstract

We deposited graphite on silicon (100) substrate through femtosecond pulsed laser deposition (fs-PLD). A high purity graphite target was placed inside a vacuum chamber at a base pressure of 10^-5 mbar. The deposition time and target to substrate distance were held constant. The crystallinity and the surface morphology of the samples were examined through X-ray diffraction (XRD) and Scanning electron microscopy (SEM). The XRD spectra revealed that the crystallinity of the films depends on the annealing temperature and the SEM images showed flake-like structures and randomly sized particles. The results showed that the optimum annealing temperature to achieve relatively smooth films with good crystalline structure is 500°C.