Structural characterization of grown erbium-doped YAG on silicon by femtosecond pulsed laser deposition

Authors

Floyd Willis I. Patricio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Wilson O. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Erbium-doped YAG were grown on a silicon (100) substrate by femtosecond pulsed laser deposition using a mode-locked Ti:Sapphire pulsed laser operating at 82 MHz repetition rate and 80 fs pulse duration. Depositions were carried out at laser power of 800 mW with deposition time varied for 2, 3 and 4 hours. Structural analysis of all deposited samples revealed YAG peaks of (420) and (800) orientations with maximum reflection at YAG (800). Low values of the full-width at half maximum of the observed peaks suggest that the structure of erbium-doped YAG deposits were crystalline.

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Issue

2014: Proceedings of the 32nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2014-PA-06

Section

Poster Session PA

Published

2014-10-17

How to Cite

[1]

FWI Patricio and WO Garcia, Structural characterization of grown erbium-doped YAG on silicon by femtosecond pulsed laser deposition, Proceedings of the Samahang Pisika ng Pilipinas 32, SPP2014-PA-06 (2014). URL: https://proceedings.spp-online.org/article/view/1853.