Structural characterization of grown erbium-doped YAG on silicon by femtosecond pulsed laser deposition
Abstract
Erbium-doped YAG were grown on a silicon (100) substrate by femtosecond pulsed laser deposition using a mode-locked Ti:Sapphire pulsed laser operating at 82 MHz repetition rate and 80 fs pulse duration. Depositions were carried out at laser power of 800 mW with deposition time varied for 2, 3 and 4 hours. Structural analysis of all deposited samples revealed YAG peaks of (420) and (800) orientations with maximum reflection at YAG (800). Low values of the full-width at half maximum of the observed peaks suggest that the structure of erbium-doped YAG deposits were crystalline.
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