Investigation on the effect of substrate heat treatment on the optical properties of MBE-grown GaAs on silicon substrates
Abstract
GaAs films on Si substrates were grown via Molecular Beam Epitaxy (MBE). The effect of pre-growth heat treatment of the Si substrate on the grown GaAs layer was investigated. Photoluminescence (PL) at T = 11K shows that the GaAs/Si band edge emission was redshifted by 23 meV as compared to as-grown GaAs indicating that the films are strained. The PL intensity of the GaAs/Si sample substrate treated at 720°C showed a remarkably higher PL intensity compared to the sample substrate treated at 610°C, indicating that heat treatment at higher temperature yields a GaAs thin film with better optical qualities.