Investigation on the effect of substrate heat treatment on the optical properties of MBE-grown GaAs on silicon substrates

Authors

  • Gerald Angelo Catindig ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Rhenish Simon ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Karl Cedric Gonzales ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Cyril Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Sheryl Ann Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Crizia Alcantara ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Horace Andrew Husay ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs films on Si substrates were grown via Molecular Beam Epitaxy (MBE). The effect of pre-growth heat treatment of the Si substrate on the grown GaAs layer was investigated. Photoluminescence (PL) at T = 11K shows that the GaAs/Si band edge emission was redshifted by 23 meV as compared to as-grown GaAs indicating that the films are strained. The PL intensity of the GaAs/Si sample substrate treated at 720°C showed a remarkably higher PL intensity compared to the sample substrate treated at 610°C, indicating that heat treatment at higher temperature yields a GaAs thin film with better optical qualities.

Downloads

Published

2015-06-03

How to Cite

[1]
“Investigation on the effect of substrate heat treatment on the optical properties of MBE-grown GaAs on silicon substrates”, Proc. SPP, vol. 33, no. 1, p. SPP-2015-PB-17, Jun. 2015, Accessed: Apr. 15, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/1223