Influence of ultrathin films on the terahertz emission of germanium

Authors

Eloise Anguluan National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
John Herber Hitachi Global Storage Technologies, Philippines Corporation
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the influence of ultrathin films of silicon nitride (Si₃N₄) and diamond-like carbon (DLC) on the terahertz (THz) emission of germanium (Ge) excited by femtosecond optical pulses. The peak-to peak amplitude of the THz field intensity was found to increase by 2.92 and 2.51 times for Ge with Si₃N₄ and DLC, respectively, with low-frequency photoexcited carriers dominating the THz emission. We attribute the enhancement to the emergence of a significant strain field at the Ge-film interface.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-3A-04

Section

Photonics and Terahertz, Optics and Signal Processing

Published

2015-06-03

How to Cite

[1]

E Anguluan, JD Vasquez, J Herber, A Somintac, A Salvador, and E Estacio, Influence of ultrathin films on the terahertz emission of germanium, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-3A-04 (2015). URL: https://proceedings.spp-online.org/article/view/1131.