Influence of ultrathin films on the terahertz emission of germanium

Authors

Eloise Anguluan ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Herber ⋅ PH Hitachi Global Storage Technologies, Philippines Corporation
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the influence of ultrathin films of silicon nitride (Si₃N₄) and diamond-like carbon (DLC) on the terahertz (THz) emission of germanium (Ge) excited by femtosecond optical pulses. The peak-to peak amplitude of the THz field intensity was found to increase by 2.92 and 2.51 times for Ge with Si₃N₄ and DLC, respectively, with low-frequency photoexcited carriers dominating the THz emission. We attribute the enhancement to the emergence of a significant strain field at the Ge-film interface.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-3A-04

Section

Photonics and Terahertz, Optics and Signal Processing

Published

2015-06-03

How to Cite

[1]

E Anguluan, JD Vasquez, J Herber, A Somintac, A Salvador, and E Estacio, Influence of ultrathin films on the terahertz emission of germanium, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-3A-04 (2015). URL: https://proceedings.spp-online.org/article/view/1131.