Temperature dependent photoluminescence spectroscopy of epitaxially lifted-off GaAs/AlGaAs multiple quantum wells bonded to Si and MgO substrates

Authors

Deborah Anne Lumantas National Institute of Physics, University of the Philippines Diliman
Gerald Catindig National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Emission peaks of epitaxially lifted off GaAs/AlGaAs multiple quantum wells (MQW) of different well widths were observed to be shifted towards lower energies (redshifted) via temperature dependent photoluminescence spectroscopy due to strain. MQW samples were grown using molecular beam epitaxy and were epitaxially lifted off and bonded to MgO and Si substrates. At T=300K, emission peaks of the epitaxially lifted-off samples were redshifted indicating the presence of residual strain.

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Issue

2015: Proceedings of the 33rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2015-5B-06

Section

Condensed Matter Physics and Materials Science

Published

2015-06-03

How to Cite

[1]

DA Lumantas, G Catindig, JD Vasquez, A Salvador, E Estacio, and A Somintac, Temperature dependent photoluminescence spectroscopy of epitaxially lifted-off GaAs/AlGaAs multiple quantum wells bonded to Si and MgO substrates, Proceedings of the Samahang Pisika ng Pilipinas 33, SPP-2015-5B-06 (2015). URL: https://proceedings.spp-online.org/article/view/1108.