Temperature dependent photoluminescence spectroscopy of epitaxially lifted-off GaAs/AlGaAs multiple quantum wells bonded to Si and MgO substrates

Authors

  • Deborah Anne Lumantas National Institute of Physics, University of the Philippines Diliman
  • Gerald Catindig National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Emission peaks of epitaxially lifted off GaAs/AlGaAs multiple quantum wells (MQW) of different well widths were observed to be shifted towards lower energies (redshifted) via temperature dependent photoluminescence spectroscopy due to strain. MQW samples were grown using molecular beam epitaxy and were epitaxially lifted off and bonded to MgO and Si substrates. At T=300K, emission peaks of the epitaxially lifted-off samples were redshifted indicating the presence of residual strain.

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Published

2015-06-03

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Section

Condensed Matter Physics and Materials Science

How to Cite

[1]
“Temperature dependent photoluminescence spectroscopy of epitaxially lifted-off GaAs/AlGaAs multiple quantum wells bonded to Si and MgO substrates”, Proc. SPP, vol. 33, no. 1, pp. SPP–2015, Jun. 2015, Accessed: Mar. 25, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/1108