Catalyst-free deposition of ZnO nanorods on silicon (100) using femtosecond pulsed laser deposition in oxygen background gas

Abstract

The deposition of ZnO on silicon (100) via catalyst-free femtosecond pulsed laser deposition was carried out in an oxygen background gas at ambient temperature and chamber pressures of 2x10^-4 mbar and 2x10^-3 mbar. Image analysis of the scanning electron micrographs of the sample grown at 2x10^-4 mbar revealed nanorods in flowerlike structures, each consisting of around 10 to 20 rods. The particle size distribution plot of the nanorods shows a particle size range of 650 nm to 8000 nm in length and 200 to 700 nm in width. The x-ray diffraction data confirmed the formation of highly oriented ZnO in the direction (110).