Demonstration of terahertz emission from nanostructured silicon
Abstract
This paper demonstrates the enhanced THz emission of surface modified silicon. The surface of silicon samples were modified via two-step metal assisted wet etching to produce silicon nanowires, and via electrochemical etching to fabricate porous silicon, respectively. After surface modification which was confirmed via scanning electron microscope, samples were characterized via terahertz-time domain spectroscopy to investigate the terahertz emission of the samples. Due to the modification of the silicon's surface up to the submicron range, multiple reflections occur within the structure which is surmised to result in the absorption of excitation source and the generation of terahertz radiation.