Optical properties of thin a-C films on Si(100) deposited via a compact planar magnetron plasma device
Abstract
Amorphous carbon thin films were deposited on silicon(100) substrates using a compact planar magnetron (CPM) plasma device. Graphite was sputtered at varying flowrates of argon, target bias and deposition time. During plasma-enhanced deposition, optical emission spectra (OES) were obtained every 15 minutes. Resulting films were then characterized with Raman spectroscopy and Reflectivity measurements, and conductivity was checked by multimeter probing at 100°C. OES results suggested that non-ionic carbon is being sputtered out during the deposition process. Raman spectra confirm the presence of a-C and trace amounts of a-SiC. Film thickness were determined from reflectivity spectra. All samples were conducting, supporting the graphitic nature of the films.