Zinc oxide thin film based gas sensor for hydrogen sulfide
Abstract
A zinc oxide (ZnO) thin film based hydrogen sulfide (H2S(g)) gas sensor device is successfully fabricated via pulsed spray pyrolysis technique and metal contact formation. Zinc acetate (ZnOAc) of 0.2M concentration was utilized as precursor solution for ZnO thin film growth, while indium was used as metal contact. X-ray diffractometry of the thin film reveals polycrystalline ZnO growth with crystallographic orientations along (100) and (202) planes. The response of the ZnO based sensor towards varying concentrations of hydrogen sulfide gas (H2S(g)), by increasing the carrier gas pressure, is studied and measured. The sensor response obtained for 5psi, 10psi and 15psi are 95.60%, 93.21% and 91.06%, respectively. The response time at room temperature was found to be 11mins, 5mins, and 3mins for 5psi, 10psi and 15psi, respectively. The high gas response and evident change of sensor’s resistance upon exposure to H2S(g) demonstrated the capability of ZnO as a good material for H2S(g) sensing.