Zinc oxide thin film based gas sensor for hydrogen sulfide

Authors

Precy Mae Calaque Materials Science and Engineering Program, College of Science
Heinritz Majella Miguel National Institute of Physics, University of the Philippines Diliman
John Michael Aguilar Materials Science and Engineering Program, University of the Philippines Diliman
Jefferson Abrenica National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

A zinc oxide (ZnO) thin film based hydrogen sulfide (H₂S_(g)) gas sensor device is successfully fabricated via pulsed spray pyrolysis technique and metal contact formation. Zinc acetate (ZnOAc) of 0.2M concentration was utilized as precursor solution for ZnO thin film growth, while indium was used as metal contact. X-ray diffractometry of the thin film reveals polycrystalline ZnO growth with crystallographic orientations along (100) and (202) planes. The response of the ZnO based sensor towards varying concentrations of hydrogen sulfide gas (H₂S_(g)), by increasing the carrier gas pressure, is studied and measured. The sensor response obtained for 5psi, 10psi and 15psi are 95.60%, 93.21% and 91.06%, respectively. The response time at room temperature was found to be 11mins, 5mins, and 3mins for 5psi, 10psi and 15psi, respectively. The high gas response and evident change of sensor’s resistance upon exposure to H₂S_(g) demonstrated the capability of ZnO as a good material for H₂S_(g) sensing.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-PB-15

Section

Poster Session PB

Published

2013-10-23

How to Cite

[1]

PM Calaque, HM Miguel, JM Aguilar, J Abrenica, and A Somintac, Zinc oxide thin film based gas sensor for hydrogen sulfide, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-PB-15 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-PB-15.