Nonreactive sputtering deposition of Ti3SiC2 thin film on polycarbonate substrate using a magnetized sheet plasma source
Abstract
Synthesis of Ti3SiC2 thin film via nonreactive sputtering deposition using graphite as a carbon source was done using a magnetized sheet plasma source. Titanium, silicon and graphite were negatively biased at -50, -200 and -350 V and sputtered by argon plasma at a discharge current of 4A and potential of 50V. The deposition time was kept constant at 120 min while the target bias was varied. XRD results showed that only the sample biased at -350 V target potential exhibited Ti3SiC2(105) and Ti3SiC2(1013) MAX phase crystalline structure. Other peaks based on XRD correspond to TiC(111) and Ti5Si3 facets were also observed.