Thin film sputtering deposition of MAX phase Ti3SiC2 on polycarbonate substrate using methane as a carbon source
Abstract
Thin film deposition of MAX phase Ti3SiC2 on polycarbonate substrate was done using the magnetized sheet plasma negative ion source facility via reactive sputtering deposition. Titanium and silicon targets were co-deposited onto polycarbonate substrate together with carbon by breaking down the CH4 gas introduced in the ion source. The varied parameter in this study was the ratio of CH4:Ar. The synthesized thin films were characterized using XRD spectroscopy, FTIR-ATR and contact angle measurement. XRD patterns of the deposited films showed the formation of Ti3SiC2 (105) and (1013), Ti5Si3 and TiC (111) phases.