Thin film sputtering deposition of MAX phase Ti3SiC2 on polycarbonate substrate using methane as a carbon source

Authors

  • Arjay Sura Department of Physical Sciences, College of Science
  • Hamdi Muhyuddin Barra Physics Department, Mindanao State University, Marawi City
  • Rommel Paulo Viloan National Institute of Physics, University of the Philippines Diliman
  • Michelle Marie Villamayor National Institute of Physics, University of the Philippines Diliman
  • Henry Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

Thin film deposition of MAX phase Ti3SiC2 on polycarbonate substrate was done using the magnetized sheet plasma negative ion source facility via reactive sputtering deposition. Titanium and silicon targets were co-deposited onto polycarbonate substrate together with carbon by breaking down the CH4 gas introduced in the ion source. The varied parameter in this study was the ratio of CH4:Ar. The synthesized thin films were characterized using XRD spectroscopy, FTIR-ATR and contact angle measurement. XRD patterns of the deposited films showed the formation of Ti3SiC2 (105) and (1013), Ti5Si3 and TiC (111) phases.

Proceedings SPP 2013 Cover

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Published

2013-10-23

Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Thin film sputtering deposition of MAX phase Ti3SiC2 on polycarbonate substrate using methane as a carbon source”, Proc. SPP, vol. 31, no. 1, p. SPP2013-PA-31, Oct. 2013, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2013-PA-31