Development of Aluminum Nitride thin film as a pH-sensor

Authors

Dyan Buan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Nestor Bareza ⋅ PH National Institute of Physics, University of the Philippines Diliman
Anthony Tuico ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Aluminum nitride (AlN) thin films were grown on Silicon (100) substrates with SiO2 layer and were fabricated for pH-sensing applications. The response of the AlN thin film in terms of change in the resistance with respect to the pH of buffer solution was observed. It was observed that for acidic solutions, the resistance decreases and for basic solutions, the resistance increases. It was shown that AlN films are sensitive to a wide range of pH values. XRD analysis was done to verify the presence of AlN thin films and the hexagonal wurtzite structure of the deposited thin films.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-PA-19

Section

Poster Session PA

Published

2013-10-23

How to Cite

[1]

D Buan, N Bareza, A Tuico, and A Somintac, Development of Aluminum Nitride thin film as a pH-sensor, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-PA-19 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-PA-19.