Temperature and excitation power-dependence of photoluminescence in GaAs-AlxGa1-xAs asymmetric double quantum wells

Authors

  • Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia ⋅ JP Surface and Interface Science Laboratory, RIKEN
  • Jessica Afalla ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
  • Kaye Ann de las Alas ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
  • Sheryl Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the tunneling effect in GaAs-AlxGa1-xAs asymmetric double quantum wells via photoluminescence (PL) spectroscopy at different temperatures and laser excitation powers. Results show that the double quantum wells follow a temperature-dependence behavior according to the Varshni equation. Moreover, the excitation power-dependent PL peak of the coupled wells exhibited red shifting with increasing excitation power, presumably due to band gap renormalization.

Proceedings SPP 2013 Cover

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Published

2013-10-23

Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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How to Cite

[1]
“Temperature and excitation power-dependence of photoluminescence in GaAs-AlxGa1-xAs asymmetric double quantum wells”, Proc. SPP, vol. 31, no. 1, p. SPP2013-PA-15, Oct. 2013, Accessed: Apr. 11, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2013-PA-15