Temperature and excitation power-dependence of photoluminescence in GaAs-Al_xGa_1-xAs asymmetric double quantum wells

Authors

Alexander De Los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ JP Surface and Interface Science Laboratory, RIKEN
Jessica Afalla ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Kaye Ann de las Alas ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Sheryl Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We investigate the tunneling effect in GaAs-Al_xGa_1-xAs asymmetric double quantum wells via photoluminescence (PL) spectroscopy at different temperatures and laser excitation powers. Results show that the double quantum wells follow a temperature-dependence behavior according to the Varshni equation. Moreover, the excitation power-dependent PL peak of the coupled wells exhibited red shifting with increasing excitation power, presumably due to band gap renormalization.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-PA-15

Section

Poster Session PA

Published

2013-10-23

How to Cite

[1]

A De Los Reyes, R Jaculbia, J Afalla, KA de las Alas, JD Vasquez, S Vizcara, E Estacio, A Somintac, and A Salvador, Temperature and excitation power-dependence of photoluminescence in GaAs-AlxGa1-xAs asymmetric double quantum wells, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-PA-15 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-PA-15.