Determination of aluminum nitride etch rates to several chemical solutions via Swanepoel method

Authors

  • Nestor D. Bareza National Institute of Physics, University of the Philippines Diliman
  • Anthony Rustia Tuico National Institute of Physics, University of the Philippines Diliman
  • Dyan D. Buan National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

This study demonstrates etch rates of transparent Aluminum Nitride (AlN) material to different chemical solutions through Swanepoel method; which is essential in fabrication of AlN sensors. This was done by solely acquiring the transmission spectrum of AlN, wherein absorbance region and thickness could be determined. Absorbance was observed to occur at ultraviolet region. The presence of AlN(110) grown via reactive RF sputtering was confirmed by X-ray diffractometry result. The etch rates of AlN in 10% wt KOH and 10% vol NH4OH, H2SO4 and HCl heated at 65°C-70°C were quantified from calculations of Swanepoel method. 

Proceedings SPP 2013 Cover

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Published

2013-10-23

Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Determination of aluminum nitride etch rates to several chemical solutions via Swanepoel method”, Proc. SPP, vol. 31, no. 1, p. SPP2013-PA-13, Oct. 2013, Accessed: Mar. 28, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2013-PA-13