Determination of aluminum nitride etch rates to several chemical solutions via Swanepoel method

Authors

Nestor D. Bareza National Institute of Physics, University of the Philippines Diliman
Anthony Rustia Tuico National Institute of Physics, University of the Philippines Diliman
Dyan D. Buan National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

This study demonstrates etch rates of transparent Aluminum Nitride (AlN) material to different chemical solutions through Swanepoel method; which is essential in fabrication of AlN sensors. This was done by solely acquiring the transmission spectrum of AlN, wherein absorbance region and thickness could be determined. Absorbance was observed to occur at ultraviolet region. The presence of AlN(110) grown via reactive RF sputtering was confirmed by X-ray diffractometry result. The etch rates of AlN in 10% wt KOH and 10% vol NH4OH, H2SO4 and HCl heated at 65°C-70°C were quantified from calculations of Swanepoel method.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-PA-13

Section

Poster Session PA

Published

2013-10-23

How to Cite

[1]

ND Bareza, AR Tuico, DD Buan, and AS Somintac, Determination of aluminum nitride etch rates to several chemical solutions via Swanepoel method, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-PA-13 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-PA-13.