Characterization of Si NW/ZnO heterojunction for photodetector application

Authors

Mc Guillis Kim F. Ramos Materials Science and Engineering Program, University of the Philippines Diliman
Nestor D. Bareza Materials Science and Engineering Program, University of the Philippines Diliman
Jefferson M. Abrenica Materials Science and Engineering Program, University of the Philippines Diliman
Armando S. Somintac Materials Science and Engineering Program, University of the Philippines Diliman

Abstract

In this paper, PN and NP heterojunctions based on Si NW and ZnO were fabricated by depositing undoped ZnO via spray pyrolysis on Si NW grown via silver-assisted electroless etching method. Heterojunctions were then characterized for their photodetector application. P-Si NW/ZnO junction was found to have an excellent absorption at the infrared domain with minute absorption along the visible range. N-Si NW/p-ZnO heterojunction, on the other hand, had a broader range of wavelength producing photocurrent with enhanced absorption extending until 650nm.

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Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-4A-5

Section

Materials Science

Published

2013-10-23

How to Cite

[1]

MGKF Ramos, ND Bareza, JM Abrenica, and AS Somintac, Characterization of Si NW/ZnO heterojunction for photodetector application, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-4A-5 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-4A-5.