Demonstration of photovoltaic cell performance based on electroless etched silicon nanowires

Authors

Philippe Martin Baguio Tingzon ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito O. Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

A p-type (100) 1.2 kΩ silicon photovoltaic cell with nanowire enhancements was fabricated. Silicon nanowires (Si NW) were grown on the n-doped surface via a one-step ”top-down” Ag-assisted electroless etching. The electrical and optical properties of the photovoltaic cells were obtained via taking scanning electron microscope, I-V curve, and reflectance spectroscopy of the photovoltaic cells. A 1.34% efficiency was obtained. The placement of the silicon nanowires in between the fingers of the photovoltaic cells increased the maximum amount of light absorbed due to its excellent anti-reflective property.

Downloads

Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-4A-3

Section

Materials Science

Published

2018-07-30

How to Cite

[1]

PMB Tingzon, JO Muldera, and AS Somintac, Demonstration of photovoltaic cell performance based on electroless etched silicon nanowires, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-4A-3 (2018). URL: https://proceedings.spp-online.org/article/view/SPP2013-4A-3.