Demonstration of photovoltaic cell performance based on electroless etched silicon nanowires

Abstract

A p-type (100) 1.2 kΩ silicon photovoltaic cell with nanowire enhancements was fabricated. Silicon nanowires (Si NW) were grown on the n-doped surface via a one-step ”top-down” Ag-assisted electroless etching. The electrical and optical properties of the photovoltaic cells were obtained via taking scanning electron microscope, I-V curve, and reflectance spectroscopy of the photovoltaic cells. A 1.34% efficiency was obtained. The placement of the silicon nanowires in between the fingers of the photovoltaic cells increased the maximum amount of light absorbed due to its excellent anti-reflective property.