Fabrication and characterization of RF sputtered aluminum nitride for thermal sensing applications
Abstract
This paper demonstrates the fabrication of a thermal sensor from a patterned AlN film with varying length. The AlN film was deposited on a Si (100) substrate via RF magnetron sputtering. An a axis oriented crystallinity defined by the AlN (10-10) peak was determined by X-ray diffraction measurements. From the electrical characterization at varying temperatures, a resistance-temperature curve following the Steinhart-Hart equation and a resistivity-temperature plot were obtained. Finally, the Steinhart-Hart curve was tested and showed a minimum deviation of 5.33% from the generated fit equation.
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