Fabrication and characterization of RF sputtered aluminum nitride for thermal sensing applications

Authors

Anthony Tuico ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Nestor Bareza ⋅ PH National Institute of Physics, University of the Philippines Diliman
Dyan Buan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

This paper demonstrates the fabrication of a thermal sensor from a patterned AlN film with varying length. The AlN film was deposited on a Si (100) substrate via RF magnetron sputtering. An a axis oriented crystallinity defined by the AlN (10-10) peak was determined by X-ray diffraction measurements. From the electrical characterization at varying temperatures, a resistance-temperature curve following the Steinhart-Hart equation and a resistivity-temperature plot were obtained. Finally, the Steinhart-Hart curve was tested and showed a minimum deviation of 5.33% from the generated fit equation.

Downloads

Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-4A-2

Section

Materials Science

Published

2013-10-23

How to Cite

[1]

A Tuico, N Bareza, D Buan, and A Somintac, Fabrication and characterization of RF sputtered aluminum nitride for thermal sensing applications, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-4A-2 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-4A-2.