N-doped and Al-doped ZnO thin films as thermoelectric energy harvesters

Authors

  • Evan Angelo Mondarte National Institute of Physics, University of the Philippines Diliman
  • Jefferson Abrenica National Institute of Physics, University of the Philippines Diliman
  • Heinritz Majella Miguel, Miguel National Institute of Physics, University of the Philippines Diliman
  • Precy Mae Calaque National Institute of Physics, University of the Philippines Diliman
  • Annaliza Amo National Institute of Physics, University of the Philippines Diliman
  • Jozen Balanay National Institute of Physics, University of the Philippines Diliman
  • Rinlee Butch Cervera Department of Mining, Metallurgical, and Materials Engineering, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Nitrogen-doped ZnO (P-type) and aluminum-doped ZnO (N-type) thin films were investigated for their thermoelectric properties. Under a temperature difference of 33.7K, N-doped ZnO was found to have higher ZT value of 0.697 and conversion
efficiency (η) of 1.39% compared to Al-doped ZnO, which has a ZT value of 0.259 and η of 0.61%. These two materials can be coupled with each other in series to obtain higher ZT and η values that can be more efficient in harvesting energy in the form of waste heat. Moreover, N-doped ZnO showed to have a potential to work as a self-powered thermal sensor.

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Article ID

SPP2013-3A-5

Section

Materials Science

Published

2013-10-23

How to Cite

[1]
EA Mondarte, J Abrenica, HMM Miguel, PM Calaque, A Amo, J Balanay, RB Cervera, A Salvador, and A Somintac, N-doped and Al-doped ZnO thin films as thermoelectric energy harvesters, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-3A-5 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-3A-5.