Fabrication of Aluminum Nitride thin film as thermistor and micro heater
Abstract
Thermistor and micro heater was designed and fabricated in a single device using Aluminum Nitride (AlN). To test the capability of the thermistor, the resistance of the device was obtained at selected temperatures ranging from 26 0C to 160 0C.
The relationship between the temperature and resistance shows great agreement to the Steinhart-Hart equation for thermistors. Subsequently, the micro heater was enabled to produce the same temperature range by applying voltage difference
across the device. A linear relationship was acquired between power dissipation and temperature. AlN was successfully demonstrated to function as micro heater and micro sensor.
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