Development of photoconductive nitrogen-doped zinc oxide

Authors

Heinritz Majella S. Miguel ⋅ PH National Institute of Physics, University of the Philippines Diliman
Precy Mae C. Calaque ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jefferson M. Abrenica ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

A nitrogen-doped zinc oxide (N:ZnO) photoconductor is successfully fabricated from a metal-semiconductor interface between an indium metal and N:ZnO thin films of varying at% N:Zn doping concentration. X-ray diffractometry (XRD) profile showed successful growth of thin films. The undoped thin flm had n-type conductivity while the doped thin films have p-type conductivity. Scanning electron microscopy (SEM) images of the thin films showed the effect of increasing doping concentration. Current-voltage(I-V) curves of the photoconductors indicated a photoresistive behavior. Resistivity measurements obtained from the I-V curves revealed that as doping concentration increases, resistivity decreases, and that the 10 at%
photoconductor had the lowest resistivity. Photoresponse curves of the 5 at% and 10 at% photoconductors showed an effective photoconductor that can react to light at varying frequencies.

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Published

2013-10-23

Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Science

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How to Cite

[1]

“Development of photoconductive nitrogen-doped zinc oxide”, Proc. SPP, vol. 31, no. 1, pp. SPP2013–2A, Oct. 2013, Accessed: Apr. 01, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2013-2A-6