Nonequilibrium quantum transport physics for a novel nanoelectronic THz source

Authors

Daryl L. Villarin Department of Physics, University of San Carlos
Reylan L. Loberternos Department of Physics, University of San Carlos
Felix A. Buot Department of Physics, University of San Carlos
Roland Emerito Sembrano Otadoy Department of Physics, University of San Carlos

Abstract

Resonant tunneling diode (RTD) is a nanodevice that is capable of generating a terahertz wave at room temperature which can be used in ultra high-speed circuitry. Present experimental techniques to measure THz current oscillations in RTDs are limited and theoretical description relies on near equilibrium quantum transport techniques. Thus its full application potential for new functionality is not realized. What is urgently needed in order to guide the design of these nanodevices is a physically-based computer-aided design tool for simulating the high-speed characteristics of RTDs. This study tries to answer this call by formulating the fundamental time-dependent quantum transport equations for type-II RTD.

Downloads

Issue

2013: Proceedings of the 31st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2013-1A-7

Section

Photonics, Terahertz, and Nanotechnology

Published

2013-10-23

How to Cite

[1]

DL Villarin, RL Loberternos, FA Buot, and RES Otadoy, Nonequilibrium quantum transport physics for a novel nanoelectronic THz source, Proceedings of the Samahang Pisika ng Pilipinas 31, SPP2013-1A-7 (2013). URL: https://proceedings.spp-online.org/article/view/SPP2013-1A-7.