Nonequilibrium quantum transport physics for a novel nanoelectronic THz source
Abstract
Resonant tunneling diode (RTD) is a nanodevice that is capable of generating a terahertz wave at room temperature which can be used in ultra high-speed circuitry. Present experimental techniques to measure THz current oscillations in RTDs are limited and theoretical description relies on near equilibrium quantum transport techniques. Thus its full application potential for new functionality is not realized. What is urgently needed in order to guide the design of these nanodevices is a physically-based computer-aided design tool for simulating the high-speed characteristics of RTDs. This study tries to answer this call by formulating the fundamental time-dependent quantum transport equations for type-II RTD.