Strong THz emission from an LTG-GaAs/n-GaAs/SI-GaAs epitaxial layer

Authors

Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jasher John Ibanes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ramon delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Reniel Cabral ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rainier Awayan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Band structure engineering was employed on a conventional low-temperature-grown Gallium Arsenide (LTG-GaAs) grown on a semi-insulating (SI) GaAs with undoped GaAs buffer (LTG-GaAs/GaAs/SI-GaAs) to enhance its terahertz (THz) emission. Instead of a thick undoped GaAs buffer layer, a thin n-doped GaAs (n-GaAs) buffer layer was grown to increase the depletion field of the sample. Strong photocurrent surge effect from the surface and interface field of the LTG-GaAs/n-GaAs/SI-GaAs epitaxial layer resulted to a THz time domain spectroscopy (TDS) signal that is even higher than bulk n-doped Indium Arsenide (n-InAs), which is known to be a strong THz surface emitter.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-PB-23

Section

Poster Session PB

Published

2012-10-22

How to Cite

[1]

EA Prieto, JJ Ibanes, R delos Santos, R Cabral, R Awayan, J Muldera, MH Balgos, R Jaculbia, A Somintac, A Salvador, and E Estacio, Strong THz emission from an LTG-GaAs/n-GaAs/SI-GaAs epitaxial layer, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-PB-23 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-PB-23.