Enhancement of the THz emission of Si wafers by the deposition of ZnO films
Abstract
Terahertz (THz) emission was demonstrated from silicon (Si) wafers deposited with zinc oxide (ZnO) films for the first time. The ZnO films were prepared by the oxidation of pulsed laser deposited zinc (Zn) thin films. The THz emission of Si was enhanced by the underlying ZnO layer regardless of the oxidation time and film microstructure. We offer an explanation of the enhanced emission mechanism in the basis of charge carrier acceleration due to large surface fields at the ZnO/Si interface.