Reciprocal space maps and Raman phonon modes of GaAs-AlGaAs core-shell nanowires grown on Si (111) substrate
Abstract
GaAs-AlGaAs core-shell nanowires were grown on anodized-aluminum- oxide (AAO) patterned-Si (111) via molecular beam epitaxy. Reciprocal space maps and phonon modes of the nanowires exhibited lattice parameter deformation and strain relaxation. Results show the relation of the strain experienced by the nanowires with the nanowire diameter.
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