Reciprocal space maps and Raman phonon modes of GaAs-AlGaAs core-shell nanowires grown on Si (111) substrate

Authors

  • Peter Jeffrey Maloles National Institute of Physics, University of the Philippines Diliman
  • Mae Agatha Tumanguil National Institute of Physics, University of the Philippines Diliman
  • Aleena Maria Laganapan National Institute of Physics, University of the Philippines Diliman
  • Jasher John Ibañes National Institute of Physics, University of the Philippines Diliman
  • Ma. Herminia Balgos National Institute of Physics, University of the Philippines Diliman
  • Ma. Charmaine Joie Gawaran National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs-AlGaAs core-shell nanowires were grown on anodized-aluminum- oxide (AAO) patterned-Si (111) via molecular beam epitaxy. Reciprocal space maps and phonon modes of the nanowires exhibited lattice parameter deformation and strain relaxation. Results show the relation of the strain experienced by the nanowires with the nanowire diameter.

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Published

2012-10-22

How to Cite

[1]
“Reciprocal space maps and Raman phonon modes of GaAs-AlGaAs core-shell nanowires grown on Si (111) substrate”, Proc. SPP, vol. 30, no. 1, p. SPP2012-PB-2, Oct. 2012, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2012-PB-2