A proof-of-concept p-n junction silicon nanowire photodetector device
Abstract
A p-n junction device was fabricated by spray-doping of orthophosphoric acid-methanol solution on p-type silicon nanowires formed by silver- assisted chemical etching. From its current-voltage curves, the device was observed to generate photocurrent under laser illumination. The obtained waveforms from the device irradiated by laser light passed through a mechanical chopper showed that the device’s response times makes it suitable as a photodetector.