A proof-of-concept p-n junction silicon nanowire photodetector device

Authors

Neil Irvin Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joseph Christopher Ragasa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Niel Gabriel Saplagio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Nemesio Mangila ⋅ PH National Institute of Physics, University of the Philippines Diliman
Marvin Laguerta ⋅ PH National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jonathan Azares ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

A p-n junction device was fabricated by spray-doping of orthophosphoric acid-methanol solution on p-type silicon nanowires formed by silver- assisted chemical etching. From its current-voltage curves, the device was observed to generate photocurrent under laser illumination. The obtained waveforms from the device irradiated by laser light passed through a mechanical chopper showed that the deviceâ€™s response times makes it suitable as a photodetector.

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Published

2012-10-22

Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PB

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How to Cite

[1]

“A proof-of-concept p-n junction silicon nanowire photodetector device”, Proc. SPP, vol. 30, no. 1, p. SPP2012-PB-19, Oct. 2012, Accessed: Apr. 16, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2012-PB-19