A proof-of-concept p-n junction silicon nanowire photodetector device
Abstract
A p-n junction device was fabricated by spray-doping of orthophosphoric acid-methanol solution on p-type silicon nanowires formed by silver- assisted chemical etching. From its current-voltage curves, the device was observed to generate photocurrent under laser illumination. The obtained waveforms from the device irradiated by laser light passed through a mechanical chopper showed that the device’s response times makes it suitable as a photodetector.
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Article ID
SPP2012-PB-19
Section
Poster Session PB
Published
2012-10-22
How to Cite
[1]
NI Cabello, JC Ragasa, NG Saplagio, N Mangila, M Laguerta, FC Awitan, JD Vasquez, J Azares, J Muldera, A Salvador, and A Somintac, A proof-of-concept p-n junction silicon nanowire photodetector device, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-PB-19 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-PB-19.