Fabrication of AlN/Air-gap distributed Bragg reflectors from wet etching of sacrificial Aluminum layers
Abstract
AlN/air-gap distributed Bragg reflectors were fabricated using selective wet etch to remove the sacrificial Al layers. AlN/Al superlattice was prepared on a Si substrate via reactive radio frequency magnetron sputtering. Scan- ning electron microscopy was also performed to determine the AlN and Al thickness layers. The AlN/Al superlattice was annealed to improved the crystallinity of AlN layers and it was characterized using x-ray diffraction. Crystalized AlN (002) was confirmed from the x-ray rocking curve. Finally, we performed reflectivity measurements of the fabricated AlN/air-gap DBRs and it was recorded to be approximately 47% at the peak reflectivity.