Femtosecond pulsed laser ablation of graphite on silicon

Abstract

In this study, a high purity graphite target placed inside a vacuum chamber at a base pressure of ~10^-2 mbar was ablated using a femtosecond laser operating at a wavelength of 786 nm, pulse repetition rate of 80MHz and pulse duration of around 100 fs. Silicon (111) substrate was placed 2, 2.5 and 3cm away from the target and the deposition times used were 2 and 3 hours. The SEM images of the samples showed flake-like structures and the XRD spectra showed peaks attributed to graphite. The SEM and XRD results showed that the structure of the samples at 2 cm target to substrate distance was more similar to the target than that of the other samples.