Fabrication and characterization of vertically-oriented silicon nanowires synthesized via silver-assisted chemical etching
Abstract
Dense arrays of long and vertically-oriented silicon nanowires (SiNWs) were fabricated from p-type (100) silicon chips using both one-step and two-step silver-assisted chemical etching. Scanning electron microscope images of the samples confirmed the formation of nanowires. X-ray diffractometry and micro-Raman spectroscopy showed that the resulting SiNWs retained the crystal quality of the parent wafer. Certain differences between the samples fabricated using these two methods were noted.