Fabrication and characterization of vertically-oriented silicon nanowires synthesized via silver-assisted chemical etching

Authors

  • Neil Irvin Cabello National Institute of Physics, University of the Philippines Diliman
  • Joseph Christopher Ragasa National Institute of Physics, University of the Philippines Diliman
  • Mae Agatha Tumanguil National Institute of Physics, University of the Philippines Diliman
  • Raymond Condes National Institute of Physics, University of the Philippines Diliman
  • Maria Herminia Balgos National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Jessica Pauline Afalla National Institute of Physics, University of the Philippines Diliman
  • Kaye Ann de las Alas National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Dense arrays of long and vertically-oriented silicon nanowires (SiNWs) were fabricated from p-type (100) silicon chips using both one-step and two-step silver-assisted chemical etching. Scanning electron microscope images of the samples confirmed the formation of nanowires. X-ray diffractometry and micro-Raman spectroscopy showed that the resulting SiNWs retained the crystal quality of the parent wafer. Certain differences between the samples fabricated using these two methods were noted.

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Issue

Article ID

SPP2012-6C-3

Section

Condensed Matter Physics

Published

2012-10-22

How to Cite

[1]
NI Cabello, JC Ragasa, MA Tumanguil, R Condes, MH Balgos, R Jaculbia, JP Afalla, KA de las Alas, A Salvador, and A Somintac, Fabrication and characterization of vertically-oriented silicon nanowires synthesized via silver-assisted chemical etching, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-6C-3 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-6C-3.