Effect of oxygen content in Tin Oxide thin film deposition on Silicon substrates using a sheet plasma negative ion source

Authors

Aubrey Faith Mella National Institute of Physics, University of the Philippines Diliman
Michelle Marie Villamayor National Institute of Physics, University of the Philippines Diliman
Rommel Paulo Viloan National Institute of Physics, University of the Philippines Diliman
Henry Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

Tin oxide (SnO₂) thin films were synthesized on Si(111) substrates through plasma-enhanced chemical vapor deposition using a magnetized sheet plasma negative ion source. Thin films were deposited through reactive dc sputtering where a tin target, applied with a negative bias and enhanced by a magnet set-up, was sputtered by argon plasma and reacted with O₂ plasma. The oxygen gas content was varied from 3:100 to 12:100 O₂:Ar gas, setting all other parameters constant. X-ray diffraction analysis shows that as the O₂ content decreases the degree of crystallinity of the thin films improve. Thin films obtained different SnO₂ textures, i.e. (110), (101), and (002). SEM results show the changes in surface morphology and the decrease in film thickness at lower oxygen content.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-5B-4

Section

Plasma Physics

Published

2012-10-22

How to Cite

[1]

AF Mella, MM Villamayor, RP Viloan, and H Ramos, Effect of oxygen content in Tin Oxide thin film deposition on Silicon substrates using a sheet plasma negative ion source, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-5B-4 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-5B-4.