Effect of oxygen content in Tin Oxide thin film deposition on Silicon substrates using a sheet plasma negative ion source

Authors

Aubrey Faith Mella ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelle Marie Villamayor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rommel Paulo Viloan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Henry Ramos ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Tin oxide (SnO₂) thin films were synthesized on Si(111) substrates through plasma-enhanced chemical vapor deposition using a magnetized sheet plasma negative ion source. Thin films were deposited through reactive dc sputtering where a tin target, applied with a negative bias and enhanced by a magnet set-up, was sputtered by argon plasma and reacted with O₂ plasma. The oxygen gas content was varied from 3:100 to 12:100 O₂:Ar gas, setting all other parameters constant. X-ray diffraction analysis shows that as the O₂ content decreases the degree of crystallinity of the thin films improve. Thin films obtained different SnO₂ textures, i.e. (110), (101), and (002). SEM results show the changes in surface morphology and the decrease in film thickness at lower oxygen content.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-5B-4

Section

Plasma Physics

Published

2012-10-22

How to Cite

[1]

AF Mella, MM Villamayor, RP Viloan, and H Ramos, Effect of oxygen content in Tin Oxide thin film deposition on Silicon substrates using a sheet plasma negative ion source, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-5B-4 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-5B-4.