Raman scattering spectroscopy of harvested silicon nanowires
Abstract
High aspect ratio silicon nanowires were fabricated via silver assisted electroless etching. The nanowires were harvested from the parent substrate using a Hi 6512 photoresist and subjected to a micro-Raman scattering spectroscopy. Shifts and broadening in the Raman spectra peak of silicon were observed and attributed to inhomogeneous localized heating due to the incident laser used in the optical characterization.
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Article ID
SPP2012-4A-4
Section
Instrumentation Physics
Published
2012-10-22
How to Cite
[1]
JC Ragasa, NI Cabello, JP Afalla, KA delas Alas, and A Somintac, Raman scattering spectroscopy of harvested silicon nanowires, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-4A-4 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-4A-4.