Photoluminescence excitation of GaAs/AlGaAs single quantum wells

Authors

Sheryl Ann Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jessica Pauline Afalla ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kaye Ann de las Alas ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

A system of four GaAs/Al_0.3Ga_0.7As single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) was characterized through photoluminescence excitation spectroscopy (PLE). Photoluminescence from above-bandgap excitation was compared to that from below-bandgap excitation. PLE peaks were observed for SQWs with well widths 51 Å and 103 Å. The optically-excited wells have yielded Stokes shift values equal to 10 meV and 23 meV for the well widths 51 Å and 103 Å, respectively.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-4A-3

Section

Instrumentation Physics

Published

2012-10-22

How to Cite

[1]

SA Vizcara, JP Afalla, KA de las Alas, MH Balgos, R Jaculbia, A Salvador, and A Somintac, Photoluminescence excitation of GaAs/AlGaAs single quantum wells, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-4A-3 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-4A-3.