Photoluminescence excitation of GaAs/AlGaAs single quantum wells

Authors

Sheryl Ann Vizcara National Institute of Physics, University of the Philippines Diliman
Jessica Pauline Afalla National Institute of Physics, University of the Philippines Diliman
Kaye Ann de las Alas National Institute of Physics, University of the Philippines Diliman
Maria Herminia Balgos National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

A system of four GaAs/Al_0.3Ga_0.7As single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) was characterized through photoluminescence excitation spectroscopy (PLE). Photoluminescence from above-bandgap excitation was compared to that from below-bandgap excitation. PLE peaks were observed for SQWs with well widths 51 Å and 103 Å. The optically-excited wells have yielded Stokes shift values equal to 10 meV and 23 meV for the well widths 51 Å and 103 Å, respectively.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-4A-3

Section

Instrumentation Physics

Published

2012-10-22

How to Cite

[1]

SA Vizcara, JP Afalla, KA de las Alas, MH Balgos, R Jaculbia, A Salvador, and A Somintac, Photoluminescence excitation of GaAs/AlGaAs single quantum wells, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-4A-3 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-4A-3.