Photoluminescence excitation of GaAs/AlGaAs single quantum wells

Authors

Sheryl Ann Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jessica Pauline Afalla ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kaye Ann de las Alas ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

A system of four GaAs/Al_0.3Ga_0.7As single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) was characterized through photoluminescence excitation spectroscopy (PLE). Photoluminescence from above-bandgap excitation was compared to that from below-bandgap excitation. PLE peaks were observed for SQWs with well widths 51 Ã… and 103 Ã…. The optically-excited wells have yielded Stokes shift values equal to 10 meV and 23 meV for the well widths 51 Ã… and 103 Ã…, respectively.

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Published

2012-10-22

Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Section

Instrumentation Physics

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How to Cite

[1]

“Photoluminescence excitation of GaAs/AlGaAs single quantum wells”, Proc. SPP, vol. 30, no. 1, pp. SPP2012–4A, Oct. 2012, Accessed: Apr. 16, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2012-4A-3