Single cycle azimuthal dependence of the THz emission from GaAs on Si (100)

Authors

  • Maria Herminia Balgos National Institute of Physics, University of the Philippines Diliman
  • Jessica Pauline Afalla National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Anne Margarette Maallo National Institute of Physics, University of the Philippines Diliman
  • Joselito Muldera National Institute of Physics, University of the Philippines Diliman
  • Gerold Pedemonte National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the azimuthal angle dependence of the terahertz (THz) emission from bulk GaAs, InAs and 1 μm thick GaAs thin film deposited on Si(100). All samples were studied in the reflection excitation geometry using a THz time-domain spectroscopy (TDS) setup. For the bulk GaAs and InAs samples, we have observed a two-fold azimuthal angle dependence. The results show that the relative contribution of the nonlinear optical rectification effect is higher in GaAs (14.3 %) than in InAs (9.65 %). We expect this since the second order nonlinear susceptibility of GaAs is higher than that of InAs. For the GaAs thin film, we have observed a single-cycle azimuthal angle dependence. In addition, the relative contribution for the GaAs thin film (28.9 %) doubled as compared to the bulk GaAs. We attribute this observation to twinning, which is highly probable in the film since GaAs and Si has a large lattice mismatch.

SPP 2012 Conference Proceedings cover

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Published

2012-10-22

Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter Physics

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Single cycle azimuthal dependence of the THz emission from GaAs on Si (100)”, Proc. SPP, vol. 30, no. 1, pp. SPP2012–3C, Oct. 2012, Accessed: Mar. 29, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2012-3C-2