Single cycle azimuthal dependence of the THz emission from GaAs on Si (100)

Authors

Maria Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jessica Pauline Afalla ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Anne Margarette Maallo ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Gerold Pedemonte ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We report on the azimuthal angle dependence of the terahertz (THz) emission from bulk GaAs, InAs and 1 μm thick GaAs thin film deposited on Si(100). All samples were studied in the reflection excitation geometry using a THz time-domain spectroscopy (TDS) setup. For the bulk GaAs and InAs samples, we have observed a two-fold azimuthal angle dependence. The results show that the relative contribution of the nonlinear optical rectification effect is higher in GaAs (14.3 %) than in InAs (9.65 %). We expect this since the second order nonlinear susceptibility of GaAs is higher than that of InAs. For the GaAs thin film, we have observed a single-cycle azimuthal angle dependence. In addition, the relative contribution for the GaAs thin film (28.9 %) doubled as compared to the bulk GaAs. We attribute this observation to twinning, which is highly probable in the film since GaAs and Si has a large lattice mismatch.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-3C-2

Section

Condensed Matter Physics

Published

2012-10-22

How to Cite

[1]

MH Balgos, JP Afalla, R Jaculbia, AM Maallo, J Muldera, G Pedemonte, A Salvador, and E Estacio, Single cycle azimuthal dependence of the THz emission from GaAs on Si (100), Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-3C-2 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-3C-2.