Fabrication and characterization of free-standing porous silicon

Authors

Lorenzo Lopez ⋅ PH Department of Physical Science, Polytechnic University of the Philippines, Sta. Mesa, Manila
K.M. Supnet ⋅ PH Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
A.I. Mabilangan ⋅ PH National Institute of Physics, University of the Philippines Diliman
N.G.E. Saplagio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rogelio Dizon ⋅ PH Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Free-standing porous silicon (FS PSi) layers were fabricated from 2x2cm²p-type silicon (100) wafers through electrochemical etching in ethanol-hydrofluoric acid solution. Currents of 15mA, 40mA and 120mA were used for anodization for 100 minutes. An abrupt increase to 250mA after the time interval showed successful liftoff of porous silicon from the silicon substrate creating FS PSi. Transmission spectra of free-standing samples showed a maximum of 40% transmission. Reflection spectra of non free-standing counter parts had 2.5% and 10% reflection for 40mA and 120mA respectively.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-PB-23

Section

Poster Session PB

Published

2011-10-24

How to Cite

[1]

L Lopez, K Supnet, A Mabilangan, N Saplagio, R Dizon, A Salvador, and A Somintac, Fabrication and characterization of free-standing porous silicon, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-PB-23 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-PB-23.