Growth of Indium Aluminum Nitride using reactive RF-magnetron sputtering
Abstract
Thin films of indium aluminum nitride were grown on glass and silicon (111) substrates using reactive rf-magnetron sputtering without substrate heating. The grown films of indium aluminum nitride with high indium content and good crystalline quality were acheived. Optical transmission of the sputtered indium aluminum nitride films had a significant red shift due to the of indium content.
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Celebrating new ideas in physics
24-26 October 2011, University of the Philippines Diliman, Quezon City