Measurements of carrier lifetimes of GaAs/AlGaAs core-shell nanowires on Si(111) substrates

Authors

  • Maria Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Michael Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jasher John Ibañes ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Michelle Bailon-Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Core-shell GaAs/AlxGa1−xAs nanowires with different diameters grown on Si(111) were investigated using room temperature time-resolved photoluminescence spectroscopy. The carrier lifetime for both the GaAs core and AlGaAs shell were measured. Both shell and core exhibits a double decay rate and a faster decay rate is observed for the AlGaAs shell. The initial fast decay in the AlGaAs is attributed to carrier transfer from the shell to the core while the slower decay is attributed to recombination of carriers within the shell. The origin of the double decay rate for the core still needs further investigation. However, one mechanism involved is the recombination of carriers within the core. This is the first reported measurement of the carrier lifetime of the shell material for GaAs/AlxGa1−xAs core-shell nanowires.

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Article ID

SPP2011-5B-4

Section

Plasma Physics and Nanotechnology

Published

2011-10-24

How to Cite

[1]
MH Balgos, R Jaculbia, M Defensor, JJ Ibañes, M Bailon-Somintac, A Salvador, and A Somintac, Measurements of carrier lifetimes of GaAs/AlGaAs core-shell nanowires on Si(111) substrates, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-5B-4 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-5B-4.