Strain investigation of InGaAs/GaAs multiple quantum wells by reciprocal space mapping

Authors

Aleena Maria Laganapan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The goal is to provide a less destructive and less labor intensive alternative to Transmission Electron Microscopy (TEM) in investigating strained materials. To do this we use an x-ray diffraction technique known as reciprocal space mapping. We demonstrate this using three epitaxially grown InGaAs/GaAs multiple quantum wells (MQW) with different composition fractions x. The reciprocal space maps (RSM) show that the sample with the highest x experiences the smallest strain and is 20.8% relaxed. The rest of the samples demonstrate the case of fully-strained lattices.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2C-5

Section

Condensed Matter and Materials Physics

Published

2011-10-24

How to Cite

[1]

AM Laganapan, MA Tumanguil, and A Somintac, Strain investigation of InGaAs/GaAs multiple quantum wells by reciprocal space mapping, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2C-5 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2C-5.