MBE-growth and x-ray diffraction of GaAs on p-GaSb(100) for intense terahertz emission
Abstract
Gallium arsenide (GaAs) thin films were grown on p-type gallium antimonide (GaSb) substrates via molecular beam epitaxy. The heterostructure generated intense terahertz signals when irradiated with femtosecond laser. Reciprocal space maps showed the top GaAs layers are relaxed. The calculated lattice constant of the GaAs films was 5.65 Å.








