MBE-growth and x-ray diffraction of GaAs on p-GaSb(100) for intense terahertz emission
Abstract
Gallium arsenide (GaAs) thin films were grown on p-type gallium antimonide (GaSb) substrates via molecular beam epitaxy. The heterostructure generated intense terahertz signals when irradiated with femtosecond laser. Reciprocal space maps showed the top GaAs layers are relaxed. The calculated lattice constant of the GaAs films was 5.65 Å.
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Published
2011-10-24
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Section
Condensed Matter and Materials Physics
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2011
Cyril Sadia, Mae Agatha Tumanguil, Aleena Maria Laganapan, Armando Somintac, Elmer Estacio, Christopher Que, Kohji Yamamoto, Masahiko Tani, Arnel Salvador
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How to Cite
[1]
C Sadia, MA Tumanguil, AM Laganapan, A Somintac, E Estacio, C Que, K Yamamoto, M Tani, and A Salvador, MBE-growth and x-ray diffraction of GaAs on p-GaSb(100) for intense terahertz emission, in Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress (Philippines, 2011), SPP2011-2C-4. URL: https://proceedings.spp-online.org/article/view/SPP2011-2C-4








