GaAs p-i(Multiple Quantum Well)-n on glass substrate by epitaxial lift-off for photovoltaic applications

Authors

Jorge Michael Presto ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this paper, we have successfully fabricated a GaAs p-i(MQW)-n on a glass substrate using epitaxial lift-off (ELO) process. Room temperature measurement of the current-voltage characteristic of the GaAs p-i(MQW)-n on glass substrate demonstrated diode ideality factor of 4.9, shunt resistance of 476,678 Ω and series resistance of 3,348 Ω with the latter obtained under dark condition. Photocurrent measurement showed a peak at 8400Å corresponding to the GaAs MQW inside the active region of the lifted-off sample on glass substrate indicating the effectiveness of the ELO process.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2C-3

Section

Condensed Matter and Materials Physics

Published

2011-10-24

How to Cite

[1]

JM Presto, JD Vasquez, and A Somintac, GaAs p-i(Multiple Quantum Well)-n on glass substrate by epitaxial lift-off for photovoltaic applications, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2C-3 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2C-3.