GaAs p-i(Multiple Quantum Well)-n on glass substrate by epitaxial lift-off for photovoltaic applications

Authors

  • Jorge Michael Presto ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this paper, we have successfully fabricated a GaAs p-i(MQW)-n on a glass substrate using epitaxial lift-off (ELO) process. Room temperature measurement of the current-voltage characteristic of the GaAs p-i(MQW)-n on glass substrate demonstrated diode ideality factor of 4.9, shunt resistance of 476,678 Ω and series resistance of 3,348 Ω with the latter obtained under dark condition. Photocurrent measurement showed a peak at 8400Å corresponding to the GaAs MQW inside the active region of the lifted-off sample on glass substrate indicating the effectiveness of the ELO process.

SPP2011 Conference Proceedings Cover

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Published

2011-10-24

Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Section

Condensed Matter and Materials Physics

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How to Cite

[1]
“GaAs p-i(Multiple Quantum Well)-n on glass substrate by epitaxial lift-off for photovoltaic applications”, Proc. SPP, vol. 29, no. 1, pp. SPP2011–2C, Oct. 2011, Accessed: Apr. 07, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2011-2C-3