Molecular beam epitaxy growth of GaAs quantum dots through modified droplet epitaxy

Authors

  • Jeremy Porquez National Institute of Physics, University of the Philippines Diliman
  • Karim Omambac National Institute of Physics, University of the Philippines Diliman
  • John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
  • Jessica Pauline Afalla National Institute of Physics, University of the Philippines Diliman
  • Michael Defensor National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The growth of uncapped GaAs quantum structures with optical lumines- cence is demonstrated in this paper. Uncapped GaAs quantum dots were grown via modified droplet epitaxy on a semi-insulating GaAs substrate at a temperature of 200 ◦C using a Riber 32-P MBE facility. The QDs grown has a density of 3 × 1010cm−2 with base diameter of 27.1 ± 3.2 nm and height of 10.2 ± 2.4 nm. 10 K photoluminescence experiments show QD PL energy centered 1.660 eV.

SPP2011 Conference Proceedings Cover

Downloads

Published

2011-10-24

Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Section

Acoustics, Optics, Photonics

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Molecular beam epitaxy growth of GaAs quantum dots through modified droplet epitaxy”, Proc. SPP, vol. 29, no. 1, pp. SPP2011–2B, Oct. 2011, Accessed: Mar. 28, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2011-2B-5