Molecular beam epitaxy growth of GaAs quantum dots through modified droplet epitaxy

Authors

Jeremy Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karim Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jessica Pauline Afalla ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The growth of uncapped GaAs quantum structures with optical lumines- cence is demonstrated in this paper. Uncapped GaAs quantum dots were grown via modified droplet epitaxy on a semi-insulating GaAs substrate at a temperature of 200 ^◦C using a Riber 32-P MBE facility. The QDs grown has a density of 3 × 10¹⁰cm⁻²with base diameter of 27.1 ± 3.2 nm and height of 10.2 ± 2.4 nm. 10 K photoluminescence experiments show QD PL energy centered 1.660 eV.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2B-5

Section

Acoustics, Optics, Photonics

Published

2011-10-24

How to Cite

[1]

J Porquez, K Omambac, JD Vasquez, JP Afalla, M Defensor, A Somintac, and A Salvador, Molecular beam epitaxy growth of GaAs quantum dots through modified droplet epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2B-5 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2B-5.