1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission

Authors

  • Christopher Que ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Cyril Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Kohji Yamamoto ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui

Abstract

Terahertz (THz) emission from GaAs/p-GaSb and p-InAs/n-GaSb semiconductor structures under a 1.55 μm femtosecond laser excitation is reported. The influence of the GaAs thin film on a p-GaSb substrate is investigated. Results show intense THz emission from GaAs/p-GaSb as compared to bare p-GaSb that could be attributed to the built-in field at the interface of the sample. The GaAs/p-GaSb sample was also compared with bulk p-InAs and p-InAs/n-GaSb emitters.

SPP2011 Conference Proceedings Cover

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Published

2011-10-24

Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Section

Acoustics, Optics, Photonics

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How to Cite

[1]
C Que, E Estacio, C Sadia, A Somintac, K Yamamoto, A Salvador, and M Tani, 1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission, in Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress (Philippines, 2011), SPP2011-2B-4. URL: https://proceedings.spp-online.org/article/view/SPP2011-2B-4
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