1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission

Authors

Christopher Que ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Cyril Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui

Abstract

Terahertz (THz) emission from GaAs/p-GaSb and p-InAs/n-GaSb semiconductor structures under a 1.55 μm femtosecond laser excitation is reported. The influence of the GaAs thin film on a p-GaSb substrate is investigated. Results show intense THz emission from GaAs/p-GaSb as compared to bare p-GaSb that could be attributed to the built-in field at the interface of the sample. The GaAs/p-GaSb sample was also compared with bulk p-InAs and p-InAs/n-GaSb emitters.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2B-4

Section

Acoustics, Optics, Photonics

Published

2011-10-24

How to Cite

[1]

C Que, E Estacio, C Sadia, A Somintac, K Yamamoto, A Salvador, and M Tani, 1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2B-4 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2B-4.