1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission

Authors

  • Christopher Que ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Cyril Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Kohji Yamamoto ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui

Abstract

Terahertz (THz) emission from GaAs/p-GaSb and p-InAs/n-GaSb semiconductor structures under a 1.55 μm femtosecond laser excitation is reported. The influence of the GaAs thin film on a p-GaSb substrate is investigated. Results show intense THz emission from GaAs/p-GaSb as compared to bare p-GaSb that could be attributed to the built-in field at the interface of the sample. The GaAs/p-GaSb sample was also compared with bulk p-InAs and p-InAs/n-GaSb emitters.

SPP2011 Conference Proceedings Cover

Downloads

Published

2011-10-24

Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Section

Acoustics, Optics, Photonics

License

Copyright License Agreement for Full Articles

How to Cite

[1]
“1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission”, Proc. SPP, vol. 29, no. 1, pp. SPP2011–2B, Oct. 2011, Accessed: Apr. 12, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2011-2B-4