Low temperature photoluminescence of single quantum wells

Authors

Jessica Pauline Afalla ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Herminia Balgos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Renebeth Payod ⋅ PH National Institute of Physics, University of the Philippines Diliman
Sheryl Vizcara ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The temperature dependence of the photoluminescence (PL) spectra of an MBE- grown GaAs/AlGaAs single quantum well system is presented in this study. The sample consists of three independent single wells with well widths 34 Å, 51 Å and 103Å grown on a single sample. The behavior of transition energies with temperature follows the Varshni equation for semiconductor bandgaps with an additional offset contributed by the confinement energies of the quantum wells. To reveal recombination efficiency for the wells, the electron-hole wavefunction overlap is computed, revealing that as well width is increased, the recombination efficiency consequently decreases. The PL spectra also shows defect-related transitions which disappear above 50K.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2B-3

Section

Acoustics, Optics, Photonics

Published

2011-10-24

How to Cite

[1]

JP Afalla, MH Balgos, R Payod, S Vizcara, A Salvador, and A Somintac, Low temperature photoluminescence of single quantum wells, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2B-3 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2B-3.