Dimension dependence of strain-relaxation in strained silicon nanostructure
Abstract
The dimension dependence of strain-relaxation in strained silicon nanostructure using micro-Raman spectroscopy was investigated. Squares and rectangular structures were studied with lateral dimensions of 800nm, 400nm and 200nm. The rectangular structures had a fixed width of 100nm. It was seen that as the lateral dimensions of the structures became smaller, the compressive strain, relative to the unpatterned εSi, within these structures increased. Hence, these structures became more relaxed. Also, all structures were more relaxed at the edges compared to their centers. These relaxations were attributed to be caused by the formation of free surfaces during patterning of the nanostructures.
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